The IRF6644PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has a footprint of a SO-8 and only 0.7 mm profile.
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IRF6644PbF
IR MOSFET
Quality Requirement Category: Consumer
Applications
RoHS Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specifies MOSFETs Ideal for High Performance Isolated Converter
Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses Low Profile (< 0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques
DirectFET™ Power MOSFET
Typical values (unless otherwise specified)
VDSS
100V min. Qg tot 28nC
VGS
± 20V max Qgd
9.0nC
RDS(on) (typ.)
10.3m@ 10V Vgs(th) 3.7V
D
G
S D
S
MN
DirectFET™ ISOMETRIC
Applicable DirectFET® Outline and Substrate Outline (see pg.
IRF6644PbF Datasheet
