IRF6644PbF
Description
The IRF6644Pb F bines the latest HEXFET® Power MOSFET Silicon technology with the advanced Direct FET® packaging to achieve the lowest on-state resistance in a package that has a footprint of a SO-8 and only 0.7 mm profile. The Direct FET® package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The Direct FET® package allows dual sided cooling to maximize thermal transfer in power systems improving previous best thermal resistance by 80%.
The IRF6644Pb F is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Tele applications (36V-75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high...
