The IRF6648PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET™ packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
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IRF6648PbF IRF6648TRPbF
RoHs Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Optimized for Synchronous Rectification for
5V to 12V outputs Low Conduction Losses Ideal for 24V input Primary Side Forward Converters Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques
DirectFET™ Power MOSFET
Typical values (unless otherwise specified)
VDSS
60V min
VGS
±20V max
Qg tot Qgd
Qgs2
RDS(on)
5.5m@ 10V
Qrr
Qoss
Vgs(th)
36nC 14nC 2.7nC 37nC 11nC
4.0V
Applicable DirectFET Outline and Substrate Outline (see p.
IRF6648PbF Datasheet
