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IRF6648TRPbF - Power MOSFET

Download the IRF6648TRPbF datasheet PDF. This datasheet also covers the IRF6648PbF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The IRF6648PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET™ packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

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Note: The manufacturer provides a single datasheet file (IRF6648PbF-Infineon.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRF6648PbF IRF6648TRPbF RoHs Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Optimized for Synchronous Rectification for 5V to 12V outputs Low Conduction Losses Ideal for 24V input Primary Side Forward Converters Low Profile (<0.7mm) Dual Sided Cooling Compatible  Compatible with existing Surface Mount Techniques  DirectFET™ Power MOSFET  Typical values (unless otherwise specified) VDSS 60V min VGS ±20V max Qg tot Qgd Qgs2 RDS(on) 5.5m@ 10V Qrr Qoss Vgs(th) 36nC 14nC 2.7nC 37nC 11nC 4.0V    Applicable DirectFET Outline and Substrate Outline (see p.