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IRF6648PbF Datasheet Power MOSFET

Manufacturer: Infineon

General Description

The IRF6648PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET™ packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

The DirectFET™ package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques.

Application note AN-1035 is followed regarding the manufacturing methods and processes.

Overview

IRF6648PbF IRF6648TRPbF RoHs Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Optimized for Synchronous Rectification for 5V to 12V outputs Low Conduction Losses Ideal for 24V input Primary Side Forward Converters Low Profile (<0.7mm) Dual Sided Cooling Compatible  Compatible with existing Surface Mount Techniques  DirectFET™ Power MOSFET  Typical values (unless otherwise specified) VDSS 60V min VGS ±20V max Qg tot Qgd Qgs2 RDS(on) 5.5m@ 10V Qrr Qoss Vgs(th) 36nC 14nC 2.7nC 37nC 11nC 4.0V    Applicable DirectFET Outline and Substrate Outline (see p.