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IRF6648 - DirectFET Power MOSFET

Datasheet Summary

Description

The IRF6648 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.

Features

  • . + -VDS VGS 3mA IG ID Current Sampling Resistors Fig 14a. Gate Charge Test Circuit Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 14b. Gate Charge Waveform 15V VDS L DRIVER RG V2G0SV tp D. U. T IAS 0.01Ω + - VDD A Fig 15a. Unclamped Inductive Test Circuit V(BR)DSS tp IAS Fig 15b. Unclamped Inductive Waveforms VDS VGS RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD D. U. T. + - VDD Fig 16a. Switching Time Test Circuit 6 VDS 90% 10% VGS td(on) tr td(off) tf Fig 16b. Switch.

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PD - 97043C IRF6648 DirectFET™ Power MOSFET ‚ l RoHs Compliant Containing No Lead and Bromide  l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Optimized for Synchronous Rectification for 5V to 12V outputs l Ideal for 24V input Primary Side Forward Converters l Low Conduction Losses l Compatible with Existing Surface Mount Techniques  Typical values (unless otherwise specified) VDSS VGS RDS(on) Qg tot Qgd 60V max ±20V max 5.5mΩ@ 10V 36nC 14nC MN Applicable DirectFET Outline and Substrate Outline (see p.
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