IRF7769L1 Datasheet | Infineon

Description The IRF7769L1TRPb F bines the latest HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The Direct FET™ package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The Direct FET™ package allows dual sided cooling to maximize thermal transfer in power systems. The IRF7769L1TRPb F is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance power converters. Ordering Information Part number IRF7769L1TRPb F Package Type Direct FET Large Can Standard Pack Form Quantity Tape and Reel Note “TR” suffix Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C ID @ TA = 25°C ID @ TC = 25°C IDM EAS Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited)- Continuous Drain Current, VGS @ 10V (Silicon Limited)- Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) - Pulsed Drain Current Single Pulse Avalanche Energy  Avalanche Current  Max. 100 ±20 124 88 20 375 500 260 Units V A m J A Typical RDS(on), (m Typical RDS(on) (m 12.00 10.00 ID = 74A TJ = 125°C 2.00 TJ = 25°C 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 VGS, Gate-to-Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage Notes  Click on this section to link to the appropriate technical paper.  Click on this section to link to the...