Description
The IRF7769L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile.
Features
- 13
IRF7769L1TRPbF
ISD, Reverse Drain Current (A)
ID , Drain Current (A) EAS, Single Pulse Avalanche Energy (mJ)
1000
100
TJ = 175°C 10 TJ = 25°C
TJ = -40°C
1
VGS = 0V 0.1
0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
ID, Drain-to-Source Current (A)
10000 1000.
IRF7769L1TRPBF Datasheet
