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IRF7769L1TRPBF Datasheet Power MOSFETs

Manufacturer: International Rectifier (now Infineon)

Overview: l RoHS Compliant, Halogen Free ‚ l Lead-Free (Qualified up to 260°C Reflow)  l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l Industrial Qualified IRF7769L1TRPbF DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS 100V min ±20V max Qg tot Qgd 200nC 110nC RDS(on) 2.8mΩ@ 10V Vgs(th) 2.

General Description

The IRF7769L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems.

Key Features

  • 13 IRF7769L1TRPbF ISD, Reverse Drain Current (A) ID , Drain Current (A) EAS, Single Pulse Avalanche Energy (mJ) 1000 100 TJ = 175°C 10 TJ = 25°C TJ = -40°C 1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ID, Drain-to-Source Current (A) 10000 1000.

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