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Infineon Technologies Electronic Components Datasheet

IRFH8202 Datasheet

MOSFET

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VDSS
25
V
RDS(on) max
(@ VGS = 10V)
Qg (typical)
Rg (typical)
ID
(@TC (Bottom) = 25°C)
1.05
52
1.3
314
m
nC
A
StrongIRFET™
IRFH8202TRPbF
PQFN 5X6 mm
Applications
OR-ing MOSFET for 12V (typical) Bus in-Rush Current
Battery Operated DC Motor Inverter MOSFET
Features
Low RDSon (<1.05 mΩ)
Low Thermal Resistance to PCB (< 0.8°C/W)
Low Profile (< 0.9mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enable better Thermal Dissipation
Increased Power Density
results in Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable Part Number
IRFH8202TRPbF
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Note
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Notes through are on page 9
1
Max.
25
± 20
47
38
314
199
1256
3.6
156
0.029
-55 to + 150
Units
V
V
A
W
W/°C
°C
Rev. 2.4, 2021-01-29


Infineon Technologies Electronic Components Datasheet

IRFH8202 Datasheet

MOSFET

No Preview Available !

IRFH8202TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS
gfs
Qg
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
Min.
25
–––
–––
–––
1.35
–––
–––
–––
–––
–––
181
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.02
0.90
1.40
1.80
-6.3
–––
–––
–––
–––
–––
110
52
13
7.8
17
15
25
36
1.3
28
46
30
19
7174
1758
828
Max.
–––
–––
1.05
1.85
2.35
–––
5.0
150
100
-100
–––
–––
78
–––
–––
–––
–––
–––
–––
2.6
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1.0mA
m
VGS = 10V, ID = 50A
VGS = 4.5V, ID = 50A
V
mV/°C
VDS = VGS, ID = 150µA
µA
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S VDS = 13V, ID = 50A
nC VGS = 10V, VDS = 13V, ID = 50A
VDS = 13V
nC
VGS = 4.5V
ID = 50A
nC VDS = 16V, VGS = 0V
VDD = 13V, VGS = 4.5V
ns
ID = 50A
RG=1.8
VGS = 0V
pF VDS = 13V
ƒ = 1.0MHz
Typ.
–––
–––
Max.
468
50
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Thermal Resistance
Parameter
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Min. Typ. Max. Units
Conditions
––– ––– 156
––– ––– 1256
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
D
G
S
––– ––– 1.0 V TJ = 25°C, IS = 50A, VGS = 0V
––– 37 56 ns TJ = 25°C, IF = 50A, VDD = 13V
––– 68 102 nC di/dt = 200A/µs
Typ.
0.5
–––
–––
–––
Max.
0.8
15
35
21
Units
°C/W
2
Rev. 2.4, 2021-01-29


Part Number IRFH8202
Description MOSFET
Maker Infineon
PDF Download

IRFH8202 Datasheet PDF






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