IRFH8202TRPbF Datasheet | Infineon

Features Low RDSon (<1.05 mΩ) Low Thermal Resistance to PCB (< 0.8°C/W) Low Profile (< 0.9mm) Industry-Standard Pinout patible with Existing Surface Mount Techniques Ro HS pliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Benefits Lower Conduction Losses Enable better Thermal Dissipation Increased Power Density results in Multi-Vendor patibility  Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable Part Number IRFH8202TRPb F Package Type PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel Note Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V  Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V  Continuous Drain Current, VGS @ 10V  Pulsed Drain Current  Power Dissipation  Power Dissipation - Linear Derating Factor  Operating Junction and Storage Temperature Range Notes  through  are on page 9 Max. 25 ± 20 47 38 314 199 1256 3.6 156 0.029 -55 to + 150 Units V V W W/°C °C Rev. 2.4, 2021-01-29 IRFH8202TRPb F Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) VGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current IGSS gfs Qg...