IRFH8202TRPBF
IRFH8202TRPBF is Power MOSFET manufactured by International Rectifier.
Features and Benefits Features
Low RDSon (<1.05 mΩ) Low Thermal Resistance to PCB (<0.8°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout patible with Existing Surface Mount Techniques Ro HS pliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification
Strong IRFET IRFH8202TRPb F
HEXFET® Power MOSFET
PQFN 5X6 mm results in
⇒
Benefits
Lower Conduction Losses Enable better thermal dissipation Increased Power Density Multi-Vendor patibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Base part number IRFH8202Pb F
Package Type PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
Orderable part number IRFH8202TRPb F
Absolute Maximum Ratings
VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C
TJ TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V c Continuous Drain Current, VGS @ 10V
Pulsed Drain Current g Power Dissipation g Power Dissipation g Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max. ± 20
30 h100 h100
0.029 -55 to + 150
Units V
W W/°C
°C
Notes through are on page 9 1 .irf. © 2015 International Rectifier
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