Datasheet Details
| Part number | IRFIZ44N |
|---|---|
| Manufacturer | Infineon |
| File Size | 502.97 KB |
| Description | Power MOSFET |
| Datasheet | IRFIZ44N-Infineon.pdf |
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Overview: Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free IRFIZ44NPbF HEXFET® Power MOSFET VDSS RDS(on) ID 55V 0.
| Part number | IRFIZ44N |
|---|---|
| Manufacturer | Infineon |
| File Size | 502.97 KB |
| Description | Power MOSFET |
| Datasheet | IRFIZ44N-Infineon.pdf |
|
|
|
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Full Pak eliminates the need for additional insulating hardware in commercial-industrial applications.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRFIZ44N | Power MOSFET | International Rectifier |
 |
IRFIZ44N | N-Channel MOSFET | INCHANGE |
|
IRFIZ44NPBF | HEXFET Power MOSFET | International Rectifier |
 |
IRFIZ44A | Power MOSFET | Samsung |
 |
IRFIZ44A | Advanced Power MOSFET | Fairchild Semiconductor |
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|---|---|
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