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IRFP260MPbF Datasheet Ir MOSFET

Manufacturer: Infineon

General Description

V(BR)DSS RDS(on) max.

ID IRFP260MPbF IR MOSFET™ 200V 0.04 50A IR MOSFET™ technology from Infineon utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and rugged device design that IR MOSFET™ devices are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Key Features

  • Advanced Process Technology.
  • Dynamic dv/dt Rating.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Ease of Paralleling.
  • Simple Drive Requirements.
  • Lead-Free.

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