IRFP260MPbF Datasheet | Infineon

Features - Advanced Process Technology - Dynamic dv/dt Rating - 175°C Operating Temperature - Fast Switching - Fully Avalanche Rated - Ease of Paralleling - Simple Drive Requirements - Lead-Free Description V(BR)DSS RDS(on) max. ID IRFP260MPb F IR MOSFET™ 200V 0.04 50A IR MOSFET™ technology from Infineon utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and rugged device design that IR MOSFET™ devices are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for mercialindustrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. G Gate Base part number IRFP260MPb F Package Type TO-247AD Standard Pack Form Quantity Tube TO-247AD D Drain S Source Orderable Part Number IRFP260MPb...