IRFP260 Overview
Standard Power MOSFET N-Channel Enhancement Mode IRFP 260 VDSS ID (cont) RDS(on) = 200 V = 46 A = 55 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ TJ = 25°C to 150°C = 25°C to 150°C; +150 G = Gate, S = Source, D = Drain, TAB = Drain ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, IS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Mounting torque 1.13/10 Nm/lb.in.
IRFP260 Key Features
- International standard package JEDEC TO-247 AD
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- High mutating dv/dt rating
- Fast switching times
