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IRFP260M - IR MOSFET

Download the IRFP260M datasheet PDF. This datasheet also covers the IRFP260MPbF variant, as both devices belong to the same ir mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

V(BR)DSS RDS(on) max.

IR MOSFET™ technology from Infineon utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • Advanced Process Technology.
  • Dynamic dv/dt Rating.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Ease of Paralleling.
  • Simple Drive Requirements.
  • Lead-Free.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFP260MPbF-Infineon.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features  Advanced Process Technology  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Ease of Paralleling  Simple Drive Requirements  Lead-Free Description V(BR)DSS RDS(on) max. ID IRFP260MPbF IR MOSFET™ 200V 0.04 50A IR MOSFET™ technology from Infineon utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged device design that IR MOSFET™ devices are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercialindustrial applications where higher power levels preclude the use of TO-220 devices.