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IRFP260NPbF - Power MOSFET

General Description

Fifth Generation HEXFET Power MOSFETs utilizes advanced processing techniques to achieve extremely low onresistance per silicon area.

Key Features

  • Advanced Process Technology.
  • Dynamic dv/dt Rating.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Ease of Paralleling.
  • Simple Drive Requirements.
  • Lead-Free TO-247AC.

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IRFP260NPbF V(BR)DSS RDS(on) max. ID 200V 0.04 50A Features • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated • Ease of Paralleling • Simple Drive Requirements • Lead-Free TO-247AC Description Fifth Generation HEXFET Power MOSFETs utilizes advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of other applications. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude th use of TO-220 devices.