IRFP260N Overview
Fifth Generation HEXFET Power MOSFETs utilizes advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of other applications. The TO-247AC package is preferred for...
IRFP260N Key Features
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Ease of Paralleling
- Simple Drive Requirements
- Lead-Free
