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IRFU3710ZPbF - Power MOSFET

Download the IRFU3710ZPbF datasheet PDF (IRFR3710ZPbF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power mosfet.

Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Multiple Package Options.
  • Lead-Free IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET® Power MOSFET   VDSS 100V RDS(on) 18m ID 42A D D.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFR3710ZPbF-Infineon.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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  Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Multiple Package Options  Lead-Free IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET® Power MOSFET   VDSS 100V RDS(on) 18m ID 42A D D Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
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