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IRFU3710ZPBF - Automotive MOSFET

Download the IRFU3710ZPBF datasheet PDF. This datasheet also covers the IRFR3710ZPBF variant, as both devices belong to the same automotive mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 100V G S RDS(on) = 18mΩ ID = 42A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFR3710ZPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFU3710ZPbF Power MOSFET Infineon
IRFU3710Z N-Channel MOSFET INCHANGE
IRFU3710Z-701PbF Power MOSFET Infineon
IRFU3711 N-Channel MOSFET INCHANGE
IRFU3711Z N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFU3710Z AUTOMOTIVE MOSFET
IRFU3711 Power MOSFET
IRFU3711PbF SMPS MOSFET
IRFU3711Z HEXFET Power MOSFET
IRFU3711ZCPBF HEXFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 95513A AUTOMOTIVE MOSFET IRFR3710ZPbF IRFU3710ZPbF HEXFET® Power MOSFET D Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 100V G S RDS(on) = 18mΩ ID = 42A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. www.