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IRFU3710ZPbF - Power MOSFET

Download the IRFU3710ZPbF datasheet PDF. This datasheet also covers the IRFR3710ZPbF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Multiple Package Options.
  • Lead-Free IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET® Power MOSFET   VDSS 100V RDS(on) 18m ID 42A D D.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFR3710ZPbF-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IRFU3711 Power MOSFET International Rectifier
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Other Datasheets by Infineon

Part Number Description
IRFU3710Z-701PbF Power MOSFET
IRFU3707ZPbF Power MOSFET
IRFU6215PbF Power MOSFET
IRFU7440PbF power MOSFET
IRF100P218 MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
  Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Multiple Package Options  Lead-Free IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET® Power MOSFET   VDSS 100V RDS(on) 18m ID 42A D D Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.