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IRFU3710ZPbF - Power MOSFET

This page provides the datasheet information for the IRFU3710ZPbF, a member of the IRFR3710ZPbF Power MOSFET family.

Datasheet Summary

Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Multiple Package Options.
  • Lead-Free IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET® Power MOSFET   VDSS 100V RDS(on) 18m ID 42A D D.

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Datasheet preview – IRFU3710ZPbF

Datasheet Details

Part number IRFU3710ZPbF
Manufacturer Infineon
File Size 665.64 KB
Description Power MOSFET
Datasheet download datasheet IRFU3710ZPbF Datasheet
Additional preview pages of the IRFU3710ZPbF datasheet.

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Full PDF Text Transcription

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  Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Multiple Package Options  Lead-Free IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET® Power MOSFET   VDSS 100V RDS(on) 18m ID 42A D D Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
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