IRLIZ44NPBF Datasheet | Infineon

- Logic - Level Gate Drive - Advanced Process Technology - Isolated Package - High Voltage Isolation = 2.5KVRMS  - Sink to Lead Creepage Dist. = 4.8mm - Fully Avalanche Rated - Lead-Free IRLIZ44NPb F HEXFET® Power MOSFET VDSS RDS(on) 55V 0.022 30A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Full Pak eliminates the need for additional insulating hardware in mercial-industrial applications. The molding pound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heat sink using a single clip or by a single screw fixing. G Gate TO-220 Full-Pak D Drain S Source Base Part Number IRLIZ44NPb F Package Type TO-220 Full-Pak Standard Pack Form Quantity Tube Orderable Part Number IRLIZ44NPb...