Datasheet Summary
MOSFET
OptiMOSTM6Power-Transistor,120V
Features
- N-channel,logiclevel
- Verylowon-resistanceRDS(on)
- ExcellentgatechargexRDS(on)product(FOM)
- Verylowreverserecoverycharge(Qrr)
- Highavalancheenergyrating
- 175°Coperatingtemperature
- Optimizedforhighfrequencyswitchingandsynchronousrectification
- Pb-freeleadplating;RoHSpliant
- Halogen-freeaccordingtoIEC61249-2-21
- MSL1classifiedaccordingtoJ-STD-020
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
RDS(on),max
3.2 mΩ
Qoss
111 nC
QG(0V...4.5V)
33...