Datasheet Summary
MOSFET
OptiMOSTM6Power-Transistor,135V
Features
- N-channel,normallevel
- Verylowon-resistanceRDS(on)
- ExcellentgatechargexRDS(on)product(FOM)
- Verylowreverserecoverycharge(Qrr)
- 100%avalanchetestedg
- 175°Coperatingtemperature
- Optimizedformotordrivesandbatterypoweredapplications
- Pb-freeleadplating;RoHSpliant
- Halogen-freeaccordingtoIEC61249-2-21
- MSL1classifiedaccordingtoJ-STD-020
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
RDS(on),max
4.6 mΩ
Qoss
112 nC
QG(0V...10V)
65 nC
Qrr(500A/µs)...