ISC046N13NM6
Features
- N-channel,normallevel
- Verylowon-resistance RDS(on)
- Excellentgatechargex RDS(on)product(FOM)
- Verylowreverserecoverycharge(Qrr)
- 100%avalanchetestedg
- 175°Coperatingtemperature
- Optimizedformotordrivesandbatterypoweredapplications
- Pb-freeleadplating;Ro HSpliant
- Halogen-freeaccordingto IEC61249-2-21
- MSL1classifiedaccordingto J-STD-020
Productvalidation
Fullyqualifiedaccordingto JEDECfor Industrial Applications
Table1Key Performance Parameters
Parameter
Value
Unit
RDS(on),max
4.6 mΩ
Qoss
112 n C
QG(0V...10V)
65 n C
Qrr(500A/µs)
85 n C
Type/Ordering Code ISC046N13NM6
Package PG-TDSON-8
Super SO8
8 7 65
56 78
1 23 4
Drain Pin 5-8
Gate
- 1
Pin 4
Source
- 1: Internal body diode Pin...
