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ISC046N13NM6 - MOSFET

Description

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Features

  • N-channel, normal level.
  • Very low on-resistance RDS(on).
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low reverse recovery charge (Qrr).
  • 100% avalanche testedg.
  • 175°C operating temperature.
  • Optimized for motor drives and battery powered.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ISC046N13NM6 MOSFET OptiMOSTM6Power-Transistor,135V Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •100%avalanchetestedg •175°Coperatingtemperature •Optimizedformotordrivesandbatterypoweredapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •MSL1classifiedaccordingtoJ-STD-020 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 135 V RDS(on),max 4.6 mΩ ID 142 A Qoss 112 nC QG(0V...
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