Datasheet Summary
MOSFET
OptiMOSTMPowerTransistor,-60V
Features
- P-Channel
- Verylowon-resistanceRDS(on)@VGS=4.5V
- 100%avalanchetested
- LogicLevel
- Enhancementmode
- Pb-freeleadplating;RoHSpliant
- Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
-60
RDS(on),max
80 mΩ
-19.6
SuperSO8
8 7 65
56 78
1 23 4
Drain Pin 5-8
Gate
- 1
Pin 4
Source
- 1: Internal body diode Pin...