ISC007N04NM6 Datasheet Text
MOSFET
OptiMOSTM6Power-Transistor,40V
Features
- OptimizedforLowVoltageDrivesapplications
- OptimizedforBatteryPoweredapplication
- OptimizedforSynchronousapplication
- Verylowon-resistanceRDS(on)
- 100%avalanchetested
- Superiorthermalresistance
- N-channel
- Pb-freeleadplating;RoHSpliant
- Halogen-freeaccordingtoIEC61249-2-21
- 175°Crated
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
40
V
RDS(on),max
0.7 mΩ
ID
381
A
Qoss
103 nC
QG(0V..10V)...