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ISC007N04NM6 - 40V MOSFET

General Description

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Key Features

  • Optimized for Low Voltage Drives.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ISC007N04NM6 MOSFET OptiMOSTM6Power-Transistor,40V Features •OptimizedforLowVoltageDrivesapplications •OptimizedforBatteryPoweredapplication •OptimizedforSynchronousapplication •Verylowon-resistanceRDS(on) •100%avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •175°Crated Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),max 0.7 mΩ ID 381 A Qoss 103 nC QG(0V..