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ISC011N03L5S - MOSFET

General Description

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Key Features

  • Optimized for high performance Buck converter.
  • Very low on-resistance RDS(on) @ VGS=4.5 V.
  • Superior thermal resistance.
  • N-channel.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product validation Qualified according to JEDEC Standard Table 1 Key Performance Parameters Parameter Value Unit VDS 30 V RDS(on),max 1.1 mΩ ID 100 A QOSS 40 nC QG(0V. .10V) 72 nC SuperSO8 8 7 65 56 78 1 23 4 43.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ISC011N03L5S MOSFET OptiMOSTMPower-MOSFET,30V Features •OptimizedforhighperformanceBuckconverter •Verylowon-resistanceRDS(on)@VGS=4.5V •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation QualifiedaccordingtoJEDECStandard Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 1.1 mΩ ID 100 A QOSS 40 nC QG(0V..10V) 72 nC SuperSO8 8 7 65 56 78 1 23 4 4321 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode ISC011N03L5S Package PG-TDSON-8 Marking 011N03L5 RelatedLinks - Final Data Sheet 1 Rev.2.0,2020-02-20 OptiMOSTMPower-MOSFET,30V ISC011N03L5S TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . .