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ISC012N04LM6 - 40V MOSFET

General Description

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Key Features

  • N-channel.
  • Very low on-resistance RDS(on).
  • Superior thermal resistance.
  • 100% avalanche tested.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21.
  • Optimized for syncronous.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ISC012N04LM6 MOSFET OptiMOSTM6Power-Transistor,40V Features •N-channel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Optimizedforsyncronousapplication •175°Crated Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),max 1.2 mΩ ID 238 A Qoss 56 nC QG 25 nC TDSON-8FL(enlargedsourceinterconnection) 8 7 65 1 2 3 4 4 3 2 1 5 67 8 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Type/OrderingCode ISC012N04LM6 Package PG-TDSON-8 FL Marking 12N04LM6 RelatedLinks - Final Data Sheet 1 Rev.2.