Datasheet Summary
MOSFET
OptiMOSTM6Power-Transistor,40V
Features
- N-channel
- Verylowon-resistanceRDS(on)
- Superiorthermalresistance
- 100%avalanchetested
- Pb-freeleadplating;RoHSpliant
- Halogen-freeaccordingtoIEC61249-2-21
- Optimizedforsyncronousapplication
- 175°Crated
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
RDS(on),max
1.2 mΩ
Qoss
56 nC
25 nC
TDSON-8FL(enlargedsourceinterconnection)
8 7 65
1 2 3 4
4 3 2 1
5 67 8
Drain Pin 5-8
Gate
-...