ISZ080N10NM6 mosfet equivalent, mosfet.
*N-channel,normallevel
*Verylowon-resistanceRDS(on)
*ExcellentgatechargexRDS(on)product(FOM)
*Verylowreverserecoverycharge(Qrr)
*.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
100
V
RDS(on),max
8.04
mΩ
ID
75
A
Qoss
35.
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