Datasheet Summary
MOSFET
OptiMOSTMPower-Transistor,-150V
Features
- P-Channel
- Verylowon-resistanceRDS(on)@VGS=4.5V
- 100%avalanchetested
- LogicLevel
- Enhancementmode
- Pb-freeleadplating;RoHSpliant
- Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
-150
RDS(on),max
750 mΩ
-5.1
PG-TSDSON-8FL
8 765
567 8
1 2 34
43 2 1
Drain Pin 5-8
Gate
- 1
Pin...