ISZ810P06LM mosfet equivalent, mosfet.
*P-Channel
*Verylowon-resistanceRDS(on)@VGS=4.5V
*100%avalanchetested
*LogicLevel
*Enhancementmode
*Pb-freeleadplating;RoHScom.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
-60
V
RDS(on),max
81
mΩ
ID
-19.5
A
PG-TSDS.
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