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Infineon Technologies Electronic Components Datasheet

K06T60 Datasheet

IGBT

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TRENCHSTOPSeries
IKP06N60T
p
Low Loss DuoPack : IGBT in TRENCHSTOPand Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Features
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for :
- Variable Speed Drive for washing machines, air conditioners and induction
cooking
- Uninterrupted Power Supply
TRENCHSTOPand Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
Low EMI
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO220-3
Type
IKP06N60T
VCE
600V
IC;Tc=100°C VCE(sat),Tj=25°C Tj,max
6A
1.5V
175C
Marking
K06T60
Package
PG-TO220-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj ≥ 25C
DC collector current, limited by Tjmax
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs
Diode forward current, limited by Tjmax
TC = 25C
TC = 100C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150C
Power dissipation
TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Value
600
12
6
18
18
12
6
18
20
5
88
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
Rev. 2.5 20.09.2013


Infineon Technologies Electronic Components Datasheet

K06T60 Datasheet

IGBT

No Preview Available !

Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
TRENCHSTOPSeries
Symbol
RthJC
RthJCD
RthJA
Conditions
IKP06N60T
p
Max. Value
1.7
2.6
62
Unit
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
VGE=0V,
IC=0.25mA
VGE = 15V, IC=6A
Tj=25C
Tj=175C
VGE=0V, IF=6A
Tj=25C
Tj=175C
IC=0.18mA,
VCE=VGE
VCE=600V,
VGE=0V
Tj=25C
Tj=175C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=6A
min.
Value
typ.
Unit
max.
600 -
-V
- 1.5 2.05
- 1.8
- 1.6 2.05
- 1.6 -
4.1 4.6 5.7
µA
- - 40
- - 700
- - 100 nA
- 3.6 - S
none
Ω
Dynamic Characteristic
Input capacitance
Ciss
VCE=25V,
- 368 - pF
Output capacitance
Coss
VGE=0V,
- 28 -
Reverse transfer capacitance
Crss
f=1MHz
- 11 -
Gate charge
QGate
VCC=480V, IC=6A
-
42
- nC
VGE=15V
Internal emitter inductance
LE
measured 5mm (0.197 in.) from case
- 7 - nH
Short circuit collector current1)
IC(SC)
VGE=15V,tSC5s
-
55
-A
VCC = 400V,
Tj = 25C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
2
Rev. 2.5 20.09.2013


Part Number K06T60
Description IGBT
Maker Infineon
Total Page 13 Pages
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