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Infineon Technologies Electronic Components Datasheet

PTAC260302SC Datasheet

Thermally-Enhanced High Power RF LDMOS FET

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PTAC260302SC
Thermally-Enhanced High Power RF LDMOS FET
30 W, 28 V, 2620 – 2690 MHz
Description
The PTAC260302SC is a 30-watt LDMOS FET intended for use in
multi-standard cellular power amplifier applications in the 2620 to 2690
MHz frequency band. This device integrates a 10-W (main) and a
20-W (peak) transistor, making it ideal for asymmetric Doherty amplifier
designs. Features include input matching, high gain and thermally-
enhanced package with earless flange. Manufactured with Infineon's
advanced LDMOS process, this device provides excellent thermal
performance and superior reliability.
PTAC260302SC
Package H-37248H-4 (formed leads)
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 85 mA,
3GPP WCDMA signal, 10.3 dB PAR,
3.84 MHz bandwidth
-20
2620 MHz
2655 MHz
-25 2690 MHz
55
45
-30 35
-35
-40
29
Efficiency
ACP Up
ACP Low
25
c260302sc_gr1
15
31 33 35 37 39 41
Average Output Power (dBm)
Features
• Asymmetrical design
• Input matching
• Wide video bandwidth
• Typical CW performance, 2690 MHz, 28 V
(Doherty configuration)
- Output power at P3dB = 31 W
- Efficiency = 56%
- Gain = 12 dB
• Typical single-carrier WCDMA performance,
2690 MHz, 28 V (Doherty configuration)
- Output power = 37.5 dBm avg
- Gain = 15 dB
- Efficiency = 45%
- IMD = –29 dBc
• Capable of handling 10:1 VSWR at 30 V, 30 W
(CW) output power
• Integrated ESD protection
• Pb-free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)
VDD = 28 V, VGS(Peak) = 1.2 V, IDQ = 85 mA, POUT = 5.4 W avg, ƒ = 2620, 2655, and 2690 MHz
WCDMA signal: 3GPP, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF
Characteristic
Linear Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
Gps
ηD
ACPR
Min Typ Max Unit
14 15 — dB
41 43 — %
–27.5 –25.5
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 02.1, 2013-08-28


Infineon Technologies Electronic Components Datasheet

PTAC260302SC Datasheet

Thermally-Enhanced High Power RF LDMOS FET

No Preview Available !

PTAC260302SC
DC Characteristics
Characteristic
Conditions
Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA
V(BR)DSS
65
V
Drain Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
— — 1 µA
VDS = 63 V, VGS = 0 V
IDSS
— — 10 µA
On-State Resistance
(main) VGS = 10 V, VDS = 0.1 V
RDS(on)
0.8
Ω
On-State Resistance
(peak) VGS = 10 V, VDS = 0.1 V
RDS(on)
0.6
Ω
Operating Gate Voltage (main) VDS = 28 V, IDQ = 0.085 A
VGS
— 2.7 —
V
Operating Gate Voltage (peak) VDS = 28 V, IDQ = 0 A
VGS
— 1.2 —
V
Gate Leakage Current
VGS = 10 V, VDS = 0 V
IGSS
— — 1 µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (TCASE 70°C, 30 W CW)
Symbol
VDSS
VGS
VDD
TJ
TSTG
RθJC
Value
65
–6 to +10
0 to +32
200
–65 to +150
1.67
Unit
V
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTAC260302SC V1 R250
Order Code
PTAC260302SCV1R250XTMA1
Package and Description
H-37248H-4 – Ceramic open-cavity, earless
flange, formed leads
Shipping
Tape & Reel, 250 pcs
Data Sheet
2 of 10
Rev. 02.1, 2013-08-28


Part Number PTAC260302SC
Description Thermally-Enhanced High Power RF LDMOS FET
Maker Infineon
Total Page 10 Pages
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