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PTFA080551E - Thermally-Enhanced High Power RF LDMOS FETs

Description

The PTFA080551E and PTFA080551F are 55-watt LDMOS FETs designed for EDGE and CDMA power amplifier applications in the 869 to 960 MHz band.

Features

  • include input matching and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA080551E Package H-36265-2 PTFA080551F Package H-37265-2 Three-carrier CDMA2000 Performance VDD = 28 V, IDQ = 450 mA, ƒ = 960 MHz Features.
  • -35 -40 -45 Broadband internal matching Typical EDGE performance - Average output power = 26 W - Gain = 18 dB - Effi.

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Datasheet Details

Part number PTFA080551E
Manufacturer Infineon
File Size 254.38 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFA080551E Datasheet
Additional preview pages of the PTFA080551E datasheet.

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Full PDF Text Transcription

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PTFA080551E PTFA080551F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 – 960 MHz Description The PTFA080551E and PTFA080551F are 55-watt LDMOS FETs designed for EDGE and CDMA power amplifier applications in the 869 to 960 MHz band. Features include input matching and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
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