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PTFB211803FL

Manufacturer: Infineon

PTFB211803FL datasheet by Infineon.

This datasheet includes multiple variants, all published together in a single manufacturer document.

PTFB211803FL datasheet preview

PTFB211803FL Datasheet Details

Part number PTFB211803FL
Datasheet PTFB211803FL PTFB211803EL Datasheet (PDF)
File Size 448.29 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FETs
PTFB211803FL page 2 PTFB211803FL page 3

PTFB211803FL Overview

The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band.

PTFB211803FL Key Features

  • 40 IMD Up
  • 45 ACPR 15
  • 50 10 IMD Low
  • Broadband internal matching
  • Typical two-carrier WCDMA performance at 2170 MH
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More Datasheets from Infineon

View all Infineon datasheets

Part Number Description
PTFB211803EL Thermally-Enhanced High Power RF LDMOS FETs
PTFB211501E Thermally-Enhanced High Power RF LDMOS FETs
PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs
PTFB211503EL Thermally-Enhanced High Power RF LDMOS FETs
PTFB211503FL Thermally-Enhanced High Power RF LDMOS FETs
PTFB210801FA Thermally-Enhanced High Power RF LDMOS FET
PTFB212503EL Thermally-Enhanced High Power RF LDMOS FETs
PTFB212503FL Thermally-Enhanced High Power RF LDMOS FETs
PTFB212507SH Thermally-Enhanced High Power RF LDMOS FET
PTFB213004F High Power RF LDMOS Field Effect Transistor

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