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PTVA042502EC Datasheet - Infineon

Thermally-Enhanced High Power RF LDMOS FET

PTVA042502EC Features

* include high gain and thermally-enhanced package with bolt-down or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. Efficiency (%), Gain (dB) IMD Shoulder (dBc) DVB-T Performance Efficiancy, Gain and

PTVA042502EC Datasheet (357.34 KB)

Preview of PTVA042502EC PDF

Datasheet Details

Part number:

PTVA042502EC

Manufacturer:

Infineon ↗

File Size:

357.34 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PTVA042502EC Thermally-Enhanced High Power LDMOS FET Infineon

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