PTVA042502EC
PTVA042502EC is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
PTVA042502EC PTVA042502FC
Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470
- 806 MHz
Description
The PTVA042502EC and PTVA042502FC LDMOS FETs are designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
Efficiency (%), Gain (d B) IMD Shoulder (d Bc)
DVB-T Performance Efficiancy, Gain and IMD3 Shoulder vs Frequency VDD = 50 V, IDQ = 800 m A, POUT = 55 W avg
35 -23
30 -25
Efficiency
25 -27
20 Gain -29
15 -31
IMDASCh Po Rulder
10 ptva042502fc_g1
-33
450 500 550 600 650 700 750 800 850
Frequency (MHz)
PTVA042502EC Package H-36248-4
PTVA042502FC Package H-37248-4
Features
- Input matched
- Integrated ESD protection
- Human Body Model Class 1C (per ANSI/
ESDA/JEDEC JS-001)
- Low thermal resistance
- Ro...
