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PTVA042502FC - Thermally-Enhanced High Power RF LDMOS FET

Download the PTVA042502FC datasheet PDF. This datasheet also covers the PTVA042502EC variant, as both devices belong to the same thermally-enhanced high power rf ldmos fet family and are provided as variant models within a single manufacturer datasheet.

General Description

The PTVA042502EC and PTVA042502FC LDMOS FETs are designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band.

Key Features

  • include high gain and thermally-enhanced package with bolt-down or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. Efficiency (%), Gain (dB) IMD Shoulder (dBc) DVB-T Performance Efficiancy, Gain and IMD3 Shoulder vs Frequency VDD = 50 V, IDQ = 800 mA, POUT = 55 W avg 35 -23 30 -25 Efficiency 25 -27 20 Gain -29 15 -31 IMDASChPoRulder 10 ptva042502fc_g1 -33 450 500 550 600 650 700 750 800 85.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PTVA042502EC-Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTVA042502FC
Manufacturer Infineon
File Size 357.34 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTVA042502FC Datasheet

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Other Datasheets by Infineon

Part Number Description
PTVA042502EC Thermally-Enhanced High Power RF LDMOS FET
PTVA047002EV Thermally-Enhanced High Power RF LDMOS FET
PTVA030121EA Thermally-Enhanced High Power RF LDMOS FET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PTVA042502EC PTVA042502FC Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 – 806 MHz Description The PTVA042502EC and PTVA042502FC LDMOS FETs are designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.