Datasheet Details
| Part number | PTVA042502EC |
|---|---|
| Manufacturer | Infineon |
| File Size | 357.34 KB |
| Description | Thermally-Enhanced High Power RF LDMOS FET |
| Datasheet |
 PTVA042502EC Datasheet
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General Description
The PTVA042502EC and PTVA042502FC LDMOS FETs are designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band.
Key Features
- include high gain and thermally-enhanced package with bolt-down or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. Efficiency (%), Gain (dB) IMD Shoulder (dBc) DVB-T Performance Efficiancy, Gain and IMD3 Shoulder vs Frequency VDD = 50 V, IDQ = 800 mA, POUT = 55 W avg 35 -23 30 -25 Efficiency 25 -27 20 Gain -29 15 -31 IMDASChPoRulder 10 ptva042502fc_g1 -33 450 500 550 600 650 700 750 800 85.