• Part: PTVA120501EA
  • Description: Thermally-Enhanced High Power RF LDMOS FET
  • Manufacturer: Infineon
  • Size: 517.79 KB
PTVA120501EA Datasheet (PDF) Download
Infineon
PTVA120501EA

Description

The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange.

Key Features

  • Broadband input matching
  • High gain and efficiency
  • Typical Pulsed CW performance, 1200 - 1400MHz, 50 V, 300 µs pulse width, 10 % duty cycle, class AB - Output power at P1dB = 54 W - Efficiency = 55% - Gain = 16 dB
  • Integ