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PXFC192207NF - Thermally-Enhanced High Power RF LDMOS FET

Description

The PXFC192207NF is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band.

Features

  • include input and output matching, high gain and a thermally-enhanced plastic package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1600 mA, VGS = 2.75 V, ƒ = 1875 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz 21 56 20 Gain 48 19 40 18 32 17 24 16 16 15 Efficiency 8 14 29 b192207nf_g1 0 33 37 41 45 49.

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Datasheet Details

Part number PXFC192207NF
Manufacturer Infineon
File Size 345.21 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PXFC192207NF Datasheet

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Full PDF Text Transcription

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PXFC192207NF Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz Description The PXFC192207NF is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching, high gain and a thermally-enhanced plastic package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1600 mA, VGS = 2.75 V, ƒ = 1875 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.
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