PXFC192207FH - Thermally-Enhanced High Power RF LDMOS FET
Wolfspeed
General Description
The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band.
Key Features
include input and
t output matching, high gain and thermally-enhanced package with c earless flanges. Manufactured with Wolfspeed's advanced LDMOS
process, this device provides excellent thermal performance and
u superior reliability. PXFC192207FH Package H-37288G-4/2
Gain (dB) Drain Efficiency (%)
od Two-carrier WCDMA Drive-up r VDD = 28 V,IDQ = 1600 mA,
3GPP WCDMA signal, PAR = 8 dB,
p 10 MHz carrier spacing, BW 3.84 MHz
30
60
d 1930 MHz
25
1960 MHz
50
e 1990 MHz
u 20
40
Gain
in.
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PXFC192207FH Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz Description The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standa...
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PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and t output matching, high gain and thermally-enhanced package with c earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and u superior reliability. PXFC192207FH Package H-37288G-4/2 Gain (dB) Drain Efficiency (%) od Two-carrier WCDMA Drive-up r VDD = 28 V,IDQ = 1600 mA, 3GPP WCDMA signal, PAR = 8 dB, p 10 MHz carrier spacing, BW 3.