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PXFC192207FH - Thermally-Enhanced High Power RF LDMOS FET

General Description

The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band.

Key Features

  • include input and t output matching, high gain and thermally-enhanced package with c earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and u superior reliability. PXFC192207FH Package H-37288G-4/2 Gain (dB) Drain Efficiency (%) od Two-carrier WCDMA Drive-up r VDD = 28 V,IDQ = 1600 mA, 3GPP WCDMA signal, PAR = 8 dB, p 10 MHz carrier spacing, BW 3.84 MHz 30 60 d 1930 MHz 25 1960 MHz 50 e 1990 MHz u 20 40 Gain in.

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Datasheet Details

Part number PXFC192207FH
Manufacturer Wolfspeed
File Size 746.31 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PXFC192207FH Datasheet

Full PDF Text Transcription for PXFC192207FH (Reference)

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PXFC192207FH Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz Description The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standa...

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PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and t output matching, high gain and thermally-enhanced package with c earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and u superior reliability. PXFC192207FH Package H-37288G-4/2 Gain (dB) Drain Efficiency (%) od Two-carrier WCDMA Drive-up r VDD = 28 V,IDQ = 1600 mA, 3GPP WCDMA signal, PAR = 8 dB, p 10 MHz carrier spacing, BW 3.