PXFC192207NF - Thermally-Enhanced High Power RF LDMOS FET

Product Overview

Infineon

Datasheet Details

Part number	PXFC192207NF
Manufacturer	Infineon
File Size	345.21 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PXFC192207NF Datasheet
Additional preview pages of the PXFC192207NF datasheet.

Product details

Description

The PXFC192207NF is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band.

Features

include input and output matching, high gain and a thermally-enhanced plastic package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1600 mA, VGS = 2.75 V, ƒ = 1875 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz 21 56 20 Gain 48 19 40 18 32 17 24 16 16 15 Efficiency 8 14 29 b192207nf_g1 0 33 37 41 45 49.

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Published: Feb 19, 2016 |