PXFC192207FH - Thermally-Enhanced High Power RF LDMOS FET

Product Overview

Infineon

Datasheet Details

Part number	PXFC192207FH
Manufacturer	Infineon
File Size	467.78 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PXFC192207FH Datasheet
Additional preview pages of the PXFC192207FH datasheet.

Product details

Description

The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band.

Features

include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V,IDQ = 1600 mA, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz 30 1930 MHz 25 1960 MHz 1990 MHz 20 Gain 15 60 50 40 30 10 20 5 0 30 10 Efficiency 35 40 45 c192207fh_g1 50 0 5.

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Published: Feb 19, 2016 |