SIGC158T170R3E igbt equivalent, igbt.
* 1700V Trench & Field Stop technology
* low turn-off losses
* short tail current
* positive temperature coefficient
* easy paralleling
This chip is.
* drives
Chip Type
VCE
IC
Die Size
SIGC158T170R3E 1700V 125A 12.57 x 12.57 mm2
C
G E
Package sawn on foil
Me.
AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883
Revision History Version 2.1 2.2
Subjects (major changes since last revision) Change wafer size to 200 mm
Additional bas.
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