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SIGC32T120R3E - IGBT

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General Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version 2.2 2.3 Subjects (major changes since last revision) Wafer diameter change to 200 mm Additional basic types L7641M, L7641T, L7641E Date 06.07.20

Overview

SIGC32T120R3E IGBT3 Power Chip.

Key Features

  • 1200V Trench + Field Stop technology.
  • low turn-off losses.
  • short tail current.
  • positive temperature coefficient.
  • easy paralleling This chip is used for:.
  • power modules.

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