Datasheet4U Logo Datasheet4U.com

SIGC32T120R3L - IGBT

Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights

Features

  • 1200V Trench + Field Stop technology.
  • 120µm chip.
  • low turn-off losses.
  • short tail current.
  • positive temperature coefficient.
  • easy paralleling 3 This chip is used for:.
  • power module C.

📥 Download Datasheet

Datasheet preview – SIGC32T120R3L

Datasheet Details

Part number SIGC32T120R3L
Manufacturer Infineon
File Size 96.88 KB
Description IGBT
Datasheet download datasheet SIGC32T120R3L Datasheet
Additional preview pages of the SIGC32T120R3L datasheet.

📁 Similar Datasheet

Other Datasheets by Infineon Technologies

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com SIGC32T120R3L IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC32T120R3L VCE 1200V ICn 25A Die Size 6.5 x 4.87 mm2 Package sawn on foil Ordering Code Q67050A4206-A101 MECHANICAL PARAMETER: Raster size Emitter pad size ( include gate pad ) Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 6.5 x 4.87 3.4 x 4.99 1.14 x 1.14 31.6 / 21.
Published: |