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SIGC32T120R3E
IGBT3 Power Chip
Features: 1200V Trench + Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling
This chip is used for: power modules
Applications: drives
Chip Type
VCE
IC
SIGC32T120R3E 1200V 25A
Die Size 6.5 x 4.87 mm2
C
G E
Package sawn on foil
Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
6.5 x 4.87
3.4 x 4.992 1.139 x 1.139
mm2
31.
SIGC32T120R3E Datasheet
