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SIGC57T120R3E - IGBT

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General Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) 2.2 Change wafer size to 200 mm 2.3 Additional basic types L7667M, L7667T, L7667E; new gate pad des

Overview

SIGC57T120R3E IGBT3 Power Chip.

Key Features

  • 1200V Trench & Field Stop technology.
  • low turn-off losses.
  • short tail current.
  • positive temperature coefficient.
  • easy paralleling This chip is used for:.
  • power modules.

📁 Similar Datasheet

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