SIGC57T120R3L - IGBT

Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights

Features

1200V Trench + Field Stop technology.
120µm chip.
low turn-off losses.
short tail current.
positive temperature coefficient.
easy paralleling 3 This chip is used for:.
power module C.

Infineon Technologies

📥 Download Datasheet

Datasheet Details

Part number	SIGC57T120R3L
Manufacturer	Infineon
File Size	97.71 KB
Description	IGBT
Datasheet	SIGC57T120R3L Datasheet
Additional preview pages of the SIGC57T120R3L datasheet.

📁 Similar Datasheet

SIGC57T120R3LE - IGBT (Infineon)
SIGC57T120R3E - IGBT (Infineon)
SIGC54T60R3E - IGBT (Infineon)
SIGC54T65R3E - IGBT (Infineon)
SIGC03T60E - IGBT (Infineon)
SIGC03T60SE - IGBT (Infineon)
SIGC03T60SNC - IGBT (Infineon)
SIGC04T60E - IGBT (Infineon)
SIGC04T60GE - IGBT (Infineon)
SIGC04T60GSE - IGBT (Infineon)

Other Datasheets by Infineon Technologies

Full PDF Text Transcription

Click to expand full text

www.DataSheet4U.com SIGC57T120R3L IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC57T120R3L VCE 1200V ICn 50A Die Size 7.6 x 7.53 mm2 Package sawn on foil Ordering Code Q67050A4267-A101 MECHANICAL PARAMETER: Raster size Emitter pad size ( include gate pad ) Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 7.6 x 7.53 6.08 x 6.05 1.14 x 1.14 57.2 / 42.

Published: Sep 15, 2007 |