SIGC57T120R3E - IGBT

Product Overview

Infineon

Datasheet Details

Part number	SIGC57T120R3E
Manufacturer	Infineon
File Size	184.22 KB
Description	IGBT
Datasheet	SIGC57T120R3E Datasheet
Additional preview pages of the SIGC57T120R3E datasheet.

Product details

Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) 2.2 Change wafer size to 200 mm 2.3 Additional basic types L7667M, L7667T, L7667E; new gate pad design Date 30.04.2010 02.07.2014 Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG All Rights Reserved.Legal Disclaimer The information given in this docume

Features

1200V Trench & Field Stop technology.
low turn-off losses.
short tail current.
positive temperature coefficient.
easy paralleling This chip is used for:.
power modules.

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Published: Feb 14, 2016 |