SPD02N80C3 transistor equivalent, power transistor.
* New revolutionary high voltage technology
* Extreme dv/dt rated
* High peak current capability
* Qualified according to JEDEC1) for target applications
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Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ
800 V 2.7 W 12 nC
* Pb-free lead plating; RoHS compliant; av.
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