SPD08P06PG
SPD08P06PG is Power-Transistor manufactured by Infineon.
SIPMOS® Power-Transistor
Features
- P-Channel
- Enhancement mode
- Avalanche rated
- dv /dt rated
- 175°C operating temperature
- Pb-free lead finishing; RoHS pliant ° Qualified according to AEC Q101
SPD08P06P G
Product Summary V DS R DS(on),max ID
-60 V 0.3 Ω -8.8 A
PG-TO252-3
Type
Package
SPD08P06PG PG-TO252-3
Tape and reel information 1000 pcs / reel
Marking Lead free 08P06P Yes
Packing Non dry
Parameter
Symbol Conditions
Continuous drain current Pulsed drain current
ID I D,pulse
T A=25 °C T A=100 °C T A=25 °C
Avalanche energy, single pulse
E AS I D=8.83 A, R GS=25 Ω
Avalanche energy, periodic limited by Tjmax
E AR
Reverse diode dv /dt dv /dt
I D=8.83 A, V DS=48...
